(4-(cyclohexylsulfonyl)phenyl)diphenylsulfonium CAS 1379516-10-5

• Iden­ti­fi­ca­tion
• Prop­er­ties
• Safe­ty Data
• Spec­i­fi­ca­tions & Oth­er Information
• Links
• Quick Inquiry

Iden­ti­fi­ca­tion

CAS Number

1379516-10-5

Name

(4-(cyclohexylsulfonyl)phenyl)diphenylsulfonium

Syn­onyms

5,6-bis(2,2,2-trifluoroethoxycarbonyl)norbornane-2-sulfonate;(4-cyclohexylsulfonylphenyl)-diphenyl-sulfonium
MFCD35221709
(4-(cyclohexylsulfonyl)phenyl)diphenylsulfonium 5,6-bis((2,2,2-trifluoroethoxy)carbonyl)bicyclo[2.2.1]heptane-2-sulfonate
(4-Cyclohexylsulfonylphenyl)-diphenyl-sulfonium 5,6-bis(2,2,2-trifluoroethoxycarbonyl)norbornane-2-sulfonate
5,6-BIS(2,2,2-TRI­FLU­O­ROETHOXY­CAR­BONYL)NOR­BOR­NANE-2-SUL­FONATE (4-CYCLO­HEXYL­SUL­FONYLPHENYL)-DIPHENYL-SUL­FO­NI­UM

SMILES

C1CCC(CC1)S(=O)(=O)C2=CC=C(C=C2)S+C4=CC=CC=C4.C1C2CC(C1C(C2C(=O)OCC(F)(F)F)C(=O)OCC(F)(F)F)S(=O)(=O)[O-]

Std­InChI

InChI=1S/C24H25O2S2.C13H14F6O7S/c25-28(26,23-14-8-3-9-15-23)24-18-16-22(17-19-24)27(20-10-4-1-5-11-20)21-12-6-2-7-13-21;14-12(15,16)3-25-10(20)8-5-1-6(7(2-5)27(22,23)24)9(8)11(21)26-4-13(17,18)19/h1-2,4-7,10-13,16-19,23H,3,8-9,14-15H2;5-9H,1-4H2,(H,22,23,24)/q+1;/p-1

Std­InChIKey

WZYJD­M­­GIOF­B­BAH-UHF­F­­FAOYSA-M

Mol­e­c­u­lar Formula

C37H38F6O9S3

Mol­e­c­u­lar Weight

836.9

MDL Number

MFCD35221709

Prop­er­ties

Appear­ance

White to off-white powder

Safe­ty Data

Sym­bol

GHS07

Sig­nal Word

Warn­ing

Haz­ard statements

Pre­cau­tion­ary Statements

RIDADR 

NONH for all modes of transport

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our (4-(cyclohexylsulfonyl)phenyl)diphenylsulfonium CAS 1379516-10-5

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Puri­ty

99% min, 99.5% min

Total met­al impurities

＜100ppb, ＜50ppb

Shelf Life

2 years

Stor­age

Under room tem­per­a­ture away from light

Known Appli­ca­tion

This prod­uct is pri­mar­i­ly used as a pho­toacid gen­er­a­tor (PAG) in chem­i­cal­ly ampli­fied pho­tore­sist sys­tems for advanced semi­con­duc­tor lith­o­g­ra­phy. Upon UV or deep ultra­vi­o­let (DUV) expo­sure, it gen­er­ates strong acids that cat­alyze depro­tec­tion reac­tions in pho­tore­sists, enabling high-res­o­lu­­tion pat­tern for­ma­tion and improved lith­o­graph­ic performance.

Typ­i­cal appli­ca­tions include :
Semi­con­duc­tor pho­tore­sist for­mu­la­tions
Inte­grat­ed cir­cuit (IC) man­u­fac­tur­ing
DUV lith­o­g­ra­phy process­es
Micro­elec­tron­ic and nanofab­ri­ca­tion tech­nolo­gies
Chem­i­cal­ly ampli­fied resist (CAR) sys­tems
Advanced pack­ag­ing and elec­tron­ic materials

As a sul­fo­ni­um salt-based PAG, it offers high acid gen­er­a­tion effi­cien­cy, good ther­mal sta­bil­i­ty, and suit­abil­i­ty for high-res­o­lu­­tion lith­o­graph­ic patterning.

Links

This prod­uct is devel­oped by our R&D com­pa­ny Wat­sonChem Advanced Chem­i­cal Mate­ri­als (https://​www​.wat​sonchem​.com/).

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