BIS(T-BUTYLSULFONYL)DIAZOMETHANE CAS 138529-84-7

• Iden­ti­fi­ca­tion
• Prop­er­ties
• Safe­ty Data
• Spec­i­fi­ca­tions & Oth­er Information
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Iden­ti­fi­ca­tion

CAS Number

138529-84-7

Name

BIS(T-BUTYL­SUL­FONYL)DIA­ZOMETHANE

Syn­onyms

2-({Diazo[(2-methyl-2-propanyl)sulfonyl]methyl}sulfonyl)-2-methylpropan
[Ger­man]
[IUPAC name – gen­er­at­ed by ACD/​Name]
2-({Diazo[(2-methyl-2-propanyl)sulfonyl]methyl}sulfonyl)-2-methylpropane
[IUPAC name – gen­er­at­ed by ACD/​Name]
2-({Diazo[(2-méthyl-2-propanyl)sulfonyl]méthyl}sulfonyl)-2-méthylpropane
[French]
[IUPAC name – gen­er­at­ed by ACD/​Name]
BIS(T-BUTYL­SUL­FONYL)DIA­ZOMETHANE
Propane, 2,2′-[(diazomethylene)disulfonyl]bis[2-methyl-
[Index name – gen­er­at­ed by ACD/​Name]
2-[Diazo(2-methylpropane-2-sulfonyl)methanesulfonyl]-2-methylpropane
MFCD04038155
[MDL num­ber]
Propane, 2,2′-[(diazomethylene)bis(sulfonyl)]bis[2-methyl-

SMILES

CC(C)(C)S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C(C)(C)C

Std­InChI

InChI=1S/C9H18N2O4S2/c1-8(2,3)16(12,13)7(11-10)17(14,15)9(4,5)6/h1-6H3

Std­InChIKey

SAFWZKVQMVOANB-UHF­F­­FAOYSA-N

Mol­e­c­u­lar Formula

C9H18N2O4S2

Mol­e­c­u­lar Weight

282.373

MDL number

MFCD04038155

Prop­er­ties

Appear­ance

White to off-white powder

Safe­ty Data

RIDADR 

NONH for all modes of transport

WGK Germany

3

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our BIS(T-BUTYL­SUL­FONYL)DIA­ZOMETHANE CAS 138529-84-7

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Puri­ty

99%min, 99.5% min

Total met­al impurities

＜100ppb, ＜50ppb

Shelf Life

2 years

Stor­age

Under room tem­per­a­ture away from light

Known Appli­ca­tion

1. Pho­toacid Gen­er­a­tor (PAG) for Semi­con­duc­tor Lith­o­g­ra­phy
   The pri­ma­ry appli­ca­tion of CAS 138529-84-7 is as a non-ion­ic pho­toacid gen­er­a­tor (PAG) used in chem­i­cal­ly ampli­fied pho­tore­sists. Upon expo­sure to deep-UV radi­a­tion, it gen­er­ates sul­fon­ic acid that cat­alyzes depro­tec­tion reac­tions dur­ing lith­o­graph­ic processing.
2. DUV and Advanced Pho­tore­sist Sys­tems
   Used in :
   KrF (248 nm) pho­tore­sists
   DUV lith­o­g­ra­phy
   Advanced semi­con­duc­tor pat­tern­ing
   High-res­o­lu­­tion micro­fab­ri­ca­tion process­es
   Its absorp­tion char­ac­ter­is­tics at lith­o­graph­ic wave­lengths make it suit­able for pho­tore­sist appli­ca­tions in semi­con­duc­tor device manufacturing.
3. Chem­i­cal­ly Ampli­fied Resist For­mu­la­tions
   Bis(tert-butylsulfonyl)diazomethane belongs to the dia­zodisul­fone class of PAGs and is incor­po­rat­ed into :
   Pos­i­­tive-tone pho­tore­sists
   Neg­a­­tive-tone pho­tore­sists
   Radi­a­­tion-sen­si­­tive resin com­po­si­tions
   Advanced resist mate­ri­als for micro- and nano-pat­tern­ing
   Patent and resist lit­er­a­ture describe dia­zodisul­fone PAGs as effec­tive acid gen­er­a­tors for high-res­o­lu­­tion lithography.
4. Micro­elec­tron­ics and Nanofab­ri­ca­tion
   Applied in :
   Inte­grat­ed cir­cuit (IC) man­u­fac­tur­ing
   MEMS fab­ri­ca­tion
   Semi­con­duc­tor process devel­op­ment
   Nan­otech­nol­o­gy pat­tern­ing appli­ca­tions
   Com­mer­cial sup­pli­ers specif­i­cal­ly clas­si­fy this com­pound as a PAG for pho­tore­sist appli­ca­tions in semi­con­duc­tor manufacturing.

Links

This prod­uct is devel­oped by our R&D com­pa­ny Wat­sonChem Advanced Chem­i­cal Mate­ri­als (https://​www​.wat​sonchem​.com/).

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