Structure of TetrakisdimethylaminotinIV CAS 1066 77 9 - Tetrakis(dimethylamino)tin(IV) CAS 1066-77-9

Iden­ti­fi­ca­tion

CAS Number

1066-77-9

Name

Tetrakis(dimethylamino)tin(IV)

Syn­onyms

1066-77-9 [RN]
1066-78-0 [RN]
MFCD00014860
N,N,N’,N’,N”,N”,N”’,N”’-Octamethylstannanetetramine [ACD/IUPAC Name]
N,N,N’,N’,N”,N”,N”’,N”’-Octaméthylstannanetétramine [French] [ACD/IUPAC Name]
N,N,N’,N’,N”,N”,N”’,N”’-Octamethylstannantetramin [Ger­man] [ACD/IUPAC Name]
Stan­nanete­tramine, N,N,N’,N’,N”,N”,N”’,N”’-octamethyl- [ACD/​Index Name]
Tetrakis(dimethylamido)tin(IV)
Tetrakis(dimethylamino)tin
Tin(IV) dimethy­lamide
Stan­nanete­tramine, octamethyl-
tetra(dimethylamino)tin
TETRAKIS TIN
Tetrakis(dimethylamino) tin(IV)
Tetrakis(dimethylamino)tin(IV)

SMILES

CN(C)[Sn](N(C)C)(N(C)C)N(C)C

Std­InChI

InChI=1S/4C2H6N.Sn/​c41-3-2;/h41-2H3;/q4*-1;+4

Std­InChIKey

WHXTVQNIFGXMSB-UHF­F­­FAOYSA-N

Mol­e­c­u­lar Formula

C8H24N4Sn

Mol­e­c­u­lar Weight

295.013

MDL Number

MFCD00014860

Prop­er­ties

Appear­ance

Col­or­less to light yel­low liquid

Struc­ture

Structure of TetrakisdimethylaminotinIV CAS 1066 77 9 - Tetrakis(dimethylamino)tin(IV) CAS 1066-77-9

Struc­ture of Tetrakis(dimethylamino)tin(IV) CAS 1066-77-9

Safe­ty Data

Sym­bol

flame jpg - Tetrakis(dimethylamino)tin(IV) CAS 1066-77-9corrosion jpg - Tetrakis(dimethylamino)tin(IV) CAS 1066-77-9exclamation mark jpg - Tetrakis(dimethylamino)tin(IV) CAS 1066-77-9GHS02,GHS05, GHS07

Sig­nal Word

Warn­ing

Haz­ard statements

H225H302 + H312 + H332H314

Pre­cau­tion­ary Statements

P210P280P301 + P312P303 + P361 + P353P304 + P340 + P310P305 + P351P338

WGK Germany

3

MSDS Download

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our 

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Puri­ty

99.5+%(99.9999%-Sn)

Shelf Life

1 year

Stor­age

Under room tem­per­a­ture away from light

Known Appli­ca­tion

Tetrakis(dimethylamino)tin(IV) is com­mon­ly employed as a pre­cur­sor for semi­con­duc­tor mate­ri­als, espe­cial­ly in process­es like Met­alor­gan­ic Chem­i­cal Vapor Depo­si­tion (MOCVD) and Met­alor­gan­ic Chem­i­cal Vapor Phase Epi­taxy (MOVPE). It is used to grow thin films of tin com­pounds and relat­ed mate­ri­als, which play a cru­cial role in semi­con­duc­tor device fabrication.

Gen­er­al View of Documents

This prod­uct is devel­oped by our R&D com­pa­ny Warshel Chem­i­cal Ltd (https://​www​.warshel​.com/).

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