Sul­fo­ni­um, triph­enyl-, salt with 2,2,2-trifluoro-1-(sulfomethyl)ethyl tricyclo[3.3.1.13,7]decane-1-carboxylate (1:1) CAS 1638216-03-1

• Iden­ti­fi­ca­tion
• Prop­er­ties
• Safe­ty Data
• Spec­i­fi­ca­tions & Oth­er Information
• Links
• Quick Inquiry

Iden­ti­fi­ca­tion

CAS Number

1638216-03-1

Name

Sul­fo­ni­um, triph­enyl-, salt with 2,2,2-trifluoro-1-(sulfomethyl)ethyl tricyclo[3.3.1.13,7]decane-1-carboxylate (1:1)

Syn­onyms

2-(adamantane-1-carbonyloxy)-3,3,3-trifluoro-propane-1-sulfonate;triphenylsulfonium
Triph­enyl­sul­fo­ni­um 2-((adamantane-1-carbonyl)oxy)-3,3,3-trifluoropropane-1-sulfonate

SMILES

O=C(OC(CS(=O)(=O)[O-])C(F)(F)F)C12CC3CC(CC(C3)C1)C2.c1ccc(S+c2ccccc2)cc1

Std­InChI

InChI=1S/C18H15S.C14H19F3O5S/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18;15-14(16,17)11(7-23(19,20)21)22-12(18)13-4-8-1-9(5-13)3-10(2-8)6-13/h1-15H;8-11H,1-7H2,(H,19,20,21)/q+1;/p-1

Std­InChIKey

LWCJG­PX­PEOMY­DB-UHF­F­­FAOYSA-M

Mol­e­c­u­lar Formula

C32H33F3O5S2

Mol­e­c­u­lar Weight

618.725

Prop­er­ties

Appear­ance

White to off-white powder

Safe­ty Data

Sym­bol

GHS07

Sig­nal Word

Warn­ing

Haz­ard statements

Pre­cau­tion­ary Statements

RIDADR 

NONH for all modes of transport

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our Sul­fo­ni­um, triph­enyl-, salt with 2,2,2-trifluoro-1-(sulfomethyl)ethyl tricyclo[3.3.1.13,7]decane-1-carboxylate (1:1) CAS 1638216-03-1

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Puri­ty

99% min, 99.5% min

Total met­al impurities

＜100ppb, ＜50ppb

Shelf Life

2 years

Stor­age

Under room tem­per­a­ture away from light

Known Appli­ca­tion

This prod­uct is pri­mar­i­ly used as a pho­toacid gen­er­a­tor (PAG) in chem­i­cal­ly ampli­fied pho­tore­sist sys­tems for advanced semi­con­duc­tor lith­o­g­ra­phy. Upon UV or deep ultra­vi­o­let (DUV) expo­sure, it gen­er­ates strong acids that cat­alyze depro­tec­tion reac­tions in pho­tore­sists, enabling high-res­o­lu­­tion pat­tern for­ma­tion and improved lith­o­graph­ic performance.

Typ­i­cal appli­ca­tions include :
Semi­con­duc­tor pho­tore­sist for­mu­la­tions
Inte­grat­ed cir­cuit (IC) man­u­fac­tur­ing
DUV lith­o­g­ra­phy process­es
Micro­elec­tron­ic and nanofab­ri­ca­tion tech­nolo­gies
Chem­i­cal­ly ampli­fied resist (CAR) sys­tems
Advanced pack­ag­ing and elec­tron­ic materials

As a sul­fo­ni­um salt-based PAG, it offers high acid gen­er­a­tion effi­cien­cy, good ther­mal sta­bil­i­ty, and suit­abil­i­ty for high-res­o­lu­­tion lith­o­graph­ic patterning.

Links

This prod­uct is devel­oped by our R&D com­pa­ny Wat­sonChem Advanced Chem­i­cal Mate­ri­als (https://​www​.wat​sonchem​.com/).

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