structure of Tetrakisdimethylaminotitanium CAS 3275 24 9 - Tetrakis(dimethylamino)titanium CAS 3275-24-9

Iden­ti­fi­ca­tion

CAS Number

3275-24-9

Name

Tetrakis(dimethylamino)titanium

Syn­onyms

221-904-3 [EINECS]
3275-24-9 [RN]
Methanamine, N-methyl-, titanium(4+) salt (4:1) [ACD/​Index Name]
MFCD00014861 [MDL num­ber]
TDMAT
Tetrakis(dimethylamido)titanium
Tetrakis(dimethylamido)titanium(IV)
Tetrakis(dimethylamino)titanium(IV)
Tétrakis(diméthylazanide) de titane(4+) [French] [ACD/IUPAC Name]
Titan(4+)tetrakis(dimethylazanid) [Ger­man] [ACD/IUPAC Name]
Titanium(4+) tetrakis(dimethylazanide) [ACD/IUPAC Name]
dimethylazanide;titanium(4+)
tdmat : ti[n(ch3)2]4
Tetrakis(dimethylamino)titanium
Tetrakis(Dimethylamino)Titanium (Met­als Basis)
Ti(NMe2)4
Titan(4+)tetrakis(dimethylazanid)
Tita­ni­um dimethy­lamide
TITA­NI­UM, TETRAKIS(DIMETHY­LAMINO)-

SMILES

CN(C)[Ti](N(C)C)(N(C)C)N(C)C

Std­InChI

InChI=1S/4C2H6N.Ti/​c41-3-2;/h41-2H3;/q4*-1;+4

Std­InChIKey

MNWROR­MXBI­WX­­CI-UHF­F­­FAOYSA-N

Mol­e­c­u­lar Formula

C8H24N4Ti

Mol­e­c­u­lar Weight

224.170

EINECS

221-904-3

MDL Number

MFCD00014861

Prop­er­ties

Appear­ance

Yel­low liquid

Struc­ture

structure of Tetrakisdimethylaminotitanium CAS 3275 24 9 - Tetrakis(dimethylamino)titanium CAS 3275-24-9

struc­ture of Tetrakis(dimethylamino)titanium CAS 3275-24-9

Safe­ty Data

Sym­bol

flame jpg - Tetrakis(dimethylamino)titanium CAS 3275-24-9corrosion jpg - Tetrakis(dimethylamino)titanium CAS 3275-24-9GHS02, GHS05

Sig­nal Word

Warn­ing

Haz­ard statements

H225H260H314

Pre­cau­tion­ary Statements

P210P223P231 + P232P280P303 + P361 + P353P305 + P351P338

WGK Germany

3

MSDS Download

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our 

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Puri­ty

99.5%+(99.9999%-Ti)

Shelf Life

1 year

Stor­age

Under room tem­per­a­ture away from light

Known Appli­ca­tion

Tetrakis(dimethylamino)titanium is com­mon­ly used as a pre­cur­sor mate­r­i­al in MOCVD for grow­ing III-V com­pound semi­con­duc­tor mate­ri­als like gal­li­um nitride (GaN) and gal­li­um arsenide (GaAs). These mate­ri­als are essen­tial for the fab­ri­ca­tion of opto­elec­tron­ic devices such as laser diodes and photodetectors.

Gen­er­al View of Documents

This prod­uct is devel­oped by our R&D com­pa­ny Warshel Chem­i­cal Ltd (https://​www​.warshel​.com/).

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