structure of TETRAKISETHYLMETHYLAMINOHAFNIUM CAS 352535 01 4 - TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM CAS 352535-01-4

Iden­ti­fi­ca­tion

CAS Number

352535-01-4

Name

TETRAKIS(ETH­YL­METHY­LAMINO)HAFNI­UM

Syn­onyms

352535-01-4 [RN]
Ethanamine, N-methyl-, hafni­um salt (4:1) [ACD/​Index Name]
Hafni­um tetrakis[ethyl(methyl)azanide] [ACD/IUPAC Name]
Hafniumtetrakis[ethyl(methyl)azanid] [Ger­man] [ACD/IUPAC Name]
MFCD03427130 [MDL num­ber]
TEMAH
Tetrakis(ethylmethylamido)hafnium(IV)
Tetrakis(ethylmethylamino)hafnium(IV)
Tétrakis[éthyl(méthyl)azanide] d’hafnium [French] [ACD/IUPAC Name]
ETHANAMINE, N-METHYL-, HAFNI­UM(4+) SALT (4:1)
ETH­YL(METHYL){TRIS[ETH­YL(METHYL)AMINO]HAFNIO}AMINE
HAFNI­UM TETRAKIS(ETH­YL­METHY­LAMIDE)
temah : hf[n(ch3)(ch2ch3)]4
Tetrakis(ethylmethylamino)hafnium

SMILES

CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

Std­InChI

InChI=1S/4C3H8N.Hf/​c41-3-4-2;/h43H2,1-2H3;/q4*-1;+4

Std­InChIKey

NPEOK­F­BCH­NGLJD-UHF­F­­FAOYSA-N

Mol­e­c­u­lar Formula

C12H32HfN4

Mol­e­c­u­lar Weight

410.899

MDL Number

MFCD03427130

Prop­er­ties

Appear­ance

Col­or­less liquid

Struc­ture

structure of TETRAKISETHYLMETHYLAMINOHAFNIUM CAS 352535 01 4 - TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM CAS 352535-01-4

struc­ture of TETRAKIS(ETH­YL­METHY­LAMINO)HAFNI­UM CAS 352535-01-4

Safe­ty Data

Sym­bol

flame jpg - TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM CAS 352535-01-4corrosion jpg - TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM CAS 352535-01-4exclamation mark jpg - TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM CAS 352535-01-4GHS02,GHS05,GHS07

Sig­nal Word

Warn­ing

Haz­ard statements

H225H260H302H314H335

Pre­cau­tion­ary Statements

P210P231 + P232P280P301 + P312P303 + P361 + P353P305 + P351P338

WGK Germany

3

MSDS Download

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our 

Iden­ti­fi­ca­tion Methods

MS

Puri­ty

99.99% min

Chlo­ride ion

≤10ppm

Shelf Life

1 year

Known Appli­ca­tion

TETRAKIS(ETH­YL­METHY­LAMINO)HAFNI­UM CAS 352535-01-4 is a com­mon met­al-organ­ic pre­cur­sor used in thin film depo­si­tion in the semi­con­duc­tor indus­try. It is employed for the depo­si­tion of high-qual­i­­ty HfO2 (hafni­um oxide) thin films, which are cru­cial in man­u­fac­tur­ing high-dielec­tric con­stant mate­ri­als and Met­al-Insu­la­­tor-Semi­­­con­­duc­­tor Field-Effect Tran­sis­tors (MIS­FETs).

Gen­er­al View of Documents

This prod­uct is devel­oped by our R&D com­pa­ny Warshel Chem­i­cal Ltd (https://​www​.warshel​.com/).

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