Structure of 6-butyl-1,3-dioxo-1H-benzo[de]isoquinolin-2(3H)-yl trifluoromethanesulfonate CAS 1610827-31-0

Iden­ti­fi­ca­tion

CAS Number

1610827-31-0

Name

6-butyl-1,3-dioxo-1H-benzo[de]isoquinolin-2(3H)-yl tri­flu­o­romethane­sul­fonate

Syn­onyms

1H-Benz[de]isoquinoline-1,3(2H)-dione, 6-butyl-2-[[(trifluoromethyl)sulfonyl]oxy]-
[Index name – gen­er­at­ed by ACD/​Name]
6-Butyl-2-{[(trifluormethyl)sulfonyl]oxy}-1H-benzo[de]isochinolin-1,3(2H)-dion
[Ger­man]
[IUPAC name – gen­er­at­ed by ACD/​Name]
6-Butyl-2-{[(trifluorométhyl)sulfonyl]oxy}-1H-benzo[de]isoquinoléine-1,3(2H)-dione
[French]
[IUPAC name – gen­er­at­ed by ACD/​Name]
6-Butyl-2-{[(trifluoromethyl)sulfonyl]oxy}-1H-benzo[de]isoquinoline-1,3(2H)-dione
[IUPAC name – gen­er­at­ed by ACD/​Name]

SMILES

CCCCc1ccc2c3c(cccc13)C(=O)N(OS(=O)(=O)C(F)(F)F)C2=O

Std­InChI

InChI=1S/C17H14F3NO5S/c1-2-3-5-10-8-9-13-14-11(10)6-4-7-12(14)15(22)21(16(13)23)26-27(24,25)17(18,19)20/h4,6-9H,2-3,5H2,1H3

Std­InChIKey

MCGHK­IFM­SZAFAV-UHF­F­­FAOYSA-N

Mol­e­c­u­lar Formula

C17H14F3NO5S

Mol­e­c­u­lar Weight

401.355

Prop­er­ties

Appear­ance

White to off-white powder

Safe­ty Data

RIDADR 

NONH for all modes of transport

WGK Germany

3

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our 6-butyl-1,3-dioxo-1H-benzo[de]isoquinolin-2(3H)-yl tri­flu­o­romethane­sul­fonate CAS 1610827-31-0

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Puri­ty

99%min, 99.5% min

Total met­al impurities

<100ppb, <50ppb

Shelf Life

2 years

Stor­age

Under room tem­per­a­ture away from light

Known Appli­ca­tion

  1. Pho­toacid Gen­er­a­tor (PAG) in Semi­con­duc­tor Lith­o­g­ra­phy
    The pri­ma­ry use of CAS 85342-62-7 is as a non-ion­ic pho­toacid gen­er­a­tor (PAG) used in chem­i­cal­ly ampli­fied pho­tore­sists. Upon expo­sure to UV, DUV, or elec­tron-beam radi­a­tion, it gen­er­ates a strong acid that dri­ves resist chem­i­cal reac­tions need­ed for pat­tern formation.
  2. Advanced Pho­tore­sist Sys­tems
    It is wide­ly used in :
    KrF (248 nm) pho­tore­sists
    ArF (193 nm) pho­tore­sists
    EUV resist research for­mu­la­tions
    High-res­o­lu­­tion semi­con­duc­tor lith­o­g­ra­phy mate­ri­als
    Its strong acid gen­er­a­tion effi­cien­cy makes it suit­able for fine pat­tern trans­fer in inte­grat­ed cir­cuit manufacturing.
  3. Micro­elec­tron­ics & Nanofab­ri­ca­tion
    Used in :
    Inte­grat­ed cir­cuit (IC) fab­ri­ca­tion
    MEMS man­u­fac­tur­ing
    Nano-pat­tern­ing process­es
    Advanced elec­tron­ic mate­r­i­al devel­op­ment
    These appli­ca­tions rely on con­trolled acid gen­er­a­tion and dif­fu­sion dur­ing expo­sure and post-expo­­sure bake steps.
  4. UV / Radi­a­­tion-Induced Poly­mer Chem­istry
    Also used as a cation­ic pho­toini­tia­tor, enabling :
    Cation­ic poly­mer­iza­tion reac­tions
    UV-cur­able coat­ings and resins (in research/​advanced for­mu­la­tions)
    Poly­mer sur­face mod­i­fi­ca­tion systems

This prod­uct is devel­oped by our R&D com­pa­ny Wat­sonChem Advanced Chem­i­cal Mate­ri­als (https://​www​.wat​sonchem​.com/).

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