Structure of Sulfonium, triphenyl-, α,α-difluorotricyclo[3.3.1.13,7]decane-1-ethanesulfonate CAS 1146597-81-0

Iden­ti­fi­ca­tion

CAS Number

1146597-81-0

Name

Sul­fo­ni­um, triph­enyl-, α,α-difluorotricyclo[3.3.1.13,7]decane-1-ethanesulfonate (1:1)

Syn­onyms

2-(adamantan-1-yl)-1,1-difluoroéthane-1-sulfonate de triphénylsulfanium[French]
[IUPAC name – gen­er­at­ed by ACD/​Name]
triph­enyl­sul­fa­ni­um 2-(adamantan-1-yl)-1,1-difluoroethane-1-sulfonate
[IUPAC name – gen­er­at­ed by ACD/​Name]
Triphenylsulfanium-2-(adamantan-1-yl)-1,1-difluorethan-1-sulfonat
[Ger­man]
[IUPAC name – gen­er­at­ed by ACD/​Name]

SMILES

O=S(=O)([O-])C(F)(F)CC12CC3CC(CC(C3)C1)C2.c1ccc(S+c2ccccc2)cc1

Std­InChI

InChI=1S/C18H15S.C12H18F2O3S/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18;13-12(14,18(15,16)17)7-11-4-8-1-9(5-11)3-10(2-8)6-11/h1-15H;8-10H,1-7H2,(H,15,16,17)/q+1;/p-1

Std­InChIKey

GRCVHLCF­­MAVQCF-UHF­F­­FAOYSA-M

Mol­e­c­u­lar Formula

C30H32F2O3S2

Mol­e­c­u­lar Weight

542.699

Prop­er­ties

Appear­ance

White to off-white powder

Safe­ty Data

Sym­bol

exclamation-mark-jpgGHS07

Sig­nal Word

Warn­ing

Haz­ard statements

H315-H319-H335

Pre­cau­tion­ary Statements

P261 ;P305+351+338 ;P302+352

RIDADR 

NONH for all modes of transport

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our Sul­fo­ni­um, triph­enyl-, α,α-difluorotricyclo[3.3.1.13,7]decane-1-ethanesulfonate (1:1) CAS 1146597-81-0

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Puri­ty

99% min, 99.5% min

Total met­al impurities

<100ppb, <50ppb

Shelf Life

2 years

Stor­age

Under room tem­per­a­ture away from light

Known Appli­ca­tion

This prod­uct is pri­mar­i­ly used as a pho­toacid gen­er­a­tor (PAG) in chem­i­cal­ly ampli­fied pho­tore­sist sys­tems for advanced semi­con­duc­tor lith­o­g­ra­phy. Upon UV or deep ultra­vi­o­let (DUV) expo­sure, it gen­er­ates strong acids that cat­alyze depro­tec­tion reac­tions in pho­tore­sists, enabling high-res­o­lu­­tion pat­tern for­ma­tion and improved lith­o­graph­ic performance.

Typ­i­cal appli­ca­tions include :
Semi­con­duc­tor pho­tore­sist for­mu­la­tions
Inte­grat­ed cir­cuit (IC) man­u­fac­tur­ing
DUV lith­o­g­ra­phy process­es
Micro­elec­tron­ic and nanofab­ri­ca­tion tech­nolo­gies
Chem­i­cal­ly ampli­fied resist (CAR) sys­tems
Advanced pack­ag­ing and elec­tron­ic materials

As a sul­fo­ni­um salt-based PAG, it offers high acid gen­er­a­tion effi­cien­cy, good ther­mal sta­bil­i­ty, and suit­abil­i­ty for high-res­o­lu­­tion lith­o­graph­ic patterning.

This prod­uct is devel­oped by our R&D com­pa­ny Wat­sonChem Advanced Chem­i­cal Mate­ri­als (https://​www​.wat​sonchem​.com/).

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