Structure of tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, nonaflate salt CAS 857285-80-4

Iden­ti­fi­ca­tion

CAS Number

857285-80-4

Name

tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, non­aflate salt

Syn­onyms

(4-{2-[(2-Methyl-2-propanyl)oxy]-2-oxoethoxy}phenyl)(diphenyl)sulfonium 1,1,2,2,3,3,4,4,4-nonafluoro-1-butanesulfonate
[IUPAC name – gen­er­at­ed by ACD/​Name]
(4-{2-[(2-Methyl-2-propanyl)oxy]-2-oxoethoxy}phenyl)(diphenyl)sulfonium-1,1,2,2,3,3,4,4,4-nonafluor-1-butansulfonat
[Ger­man]
[IUPAC name – gen­er­at­ed by ACD/​Name]
1,1,2,2,3,3,4,4,4-Nonafluoro-1-butanesulfonate de (4-{2-[(2-méthyl-2-propanyl)oxy]-2-oxoéthoxy}phényl)(diphényl)sulfonium
[French]
[IUPAC name – gen­er­at­ed by ACD/​Name]
Unver­i­fied
857285-80-4
[RN]
4-(2-tert-Butoxy-2-oxoethoxy)phenylsul­fa­ni­um non­a­flu­o­robu­­tane-1-sul­­fonate
t-Butyl 2-[4-(diphenylsulfonium)phenoxy]acetate, non­aflate salt
t-Butyl 2-[4-(diphenylsulfonium)phenoxy]acetate,nonaflate salt
tert-butyl 2-[4-(diphenylsulfonium)phenoxy]acetate,nonaflate salt
tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate non­aflate salt
tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, non­aflate salt
tert-Butyl2-[4-(diphenylsulphonium)phenoxy]acetate,nonaflatesalt
{4-[2-(TERT-BUTOXY)-2-OXOETHOXY]PHENYL}DIPHENYL­SUL­FA­NI­UM NON­A­FLU­O­ROBU­­TANE-1-SUL­­FONATE

SMILES

CC(C)(C)OC(=O)COc1ccc(S+c2ccccc2)cc1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

Std­InChI

InChI=1S/C24H25O3S.C4HF9O3S/c1-24(2,3)27-23(25)18-26-19-14-16-22(17-15-19)28(20-10-6-4-7-11-20)21-12-8-5-9-13-21;5-1(6,3(9,10)11)2(7,8)4(12,13)17(14,15)16/h4-17H,18H2,1-3H3;(H,14,15,16)/q+1;/p-1

Std­InChIKey

QGJXWN­MBTQ­­GAFT-UHF­F­­FAOYSA-M

Mol­e­c­u­lar Formula

C28H25F9O6S2

Mol­e­c­u­lar Weight

692.604

Prop­er­ties

Appear­ance

White to off-white powder

Safe­ty Data

RIDADR 

NONH for all modes of transport

WGK Germany

3

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, non­aflate salt CAS 857285-80-4

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Puri­ty

99%min, 99.5% min

Total met­al impurities

<100ppb, <50ppb

Shelf Life

2 years

Stor­age

Under room tem­per­a­ture away from light

Known Appli­ca­tion

  1. Pho­toacid Gen­er­a­tor (PAG) for Semi­con­duc­tor Lith­o­g­ra­phy
    The pri­ma­ry appli­ca­tion of CAS 857285-80-4 is as a pho­toacid gen­er­a­tor (PAG) in chem­i­cal­ly ampli­fied pho­tore­sists. The sul­fo­ni­um cation gen­er­ates a strong acid upon expo­sure to UV, DUV, elec­tron-beam, or EUV radi­a­tion, enabling high-res­o­lu­­tion pat­tern for­ma­tion in semi­con­duc­tor manufacturing.
  2. Advanced Pho­tore­sist For­mu­la­tions
    Used in :
    KrF (248 nm) pho­tore­sists
    ArF (193 nm) pho­tore­sists
    EUV pho­tore­sists
    High-res­o­lu­­tion micro- and nano-pat­tern­ing mate­ri­als
    The non­aflate coun­te­ri­on pro­vides strong acid­i­ty, good ther­mal sta­bil­i­ty, and con­trolled acid dif­fu­sion, which are impor­tant for advanced lith­o­g­ra­phy processes.
  3. Micro­elec­tron­ics and MEMS Fab­ri­ca­tion
    Applied in :
    Inte­grat­ed cir­cuit (IC) man­u­fac­tur­ing
    MEMS devices
    Micro­elec­tron­ic pat­tern­ing
    Nanofab­ri­ca­tion tech­nolo­gies
    A relat­ed patent describes its use in radi­a­­tion-sen­si­­tive resin com­po­si­tions, con­firm­ing its role in pho­tore­sist systems.
  4. Elec­tron­ic Mate­ri­als Research
    Used in the devel­op­ment of :
    Chem­i­cal­ly ampli­fied resist sys­tems
    Radi­a­­tion-sen­si­­tive poly­mers
    Advanced elec­tron­ic mate­ri­als
    Next-gen­er­a­­tion lith­o­graph­ic materials

This prod­uct is devel­oped by our R&D com­pa­ny Wat­sonChem Advanced Chem­i­cal Mate­ri­als (https://​www​.wat​sonchem​.com/).

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