TETRAVINYL­SI­LANE CAS 1112-55-6

• Iden­ti­fi­ca­tion
• Prop­er­ties
• Safe­ty Data
• Spec­i­fi­ca­tions & Oth­er Information
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Iden­ti­fi­ca­tion

CAS Number

1112-55-6

Name

TETRAVINYL­SI­LANE

Syn­onyms

1112-55-6 [RN]
214-192-0 [EINECS]
MFCD00008607
Silane, tetraethenyl- [ACD/​Index Name]
Silane, tetravinyl-
Tetraethenyl­si­lane
Tetravinyl­si­lan [Ger­man] [ACD/IUPAC Name]
Tetravinyl­si­lane [ACD/IUPAC Name]
Tétravinyl­si­lane [French] [ACD/IUPAC Name]
(CH2=CH)4Si
Silane, tetravinyl- (8CI)
tetra(ethene)silane
tetrakis(ethenyl)silane
Tetravinyl­si­lan

SMILES

C=C[Si](C=C)(C=C)C=C

Std­InChI

InChI=1S/C8H12Si/c1-5-9(6-2,7-3)8-4/h5-8H,1-4H2

Std­InChIKey

UFHILTC­­GAOP­­TOV-UHF­F­­FAOYSA-N

Mol­e­c­u­lar Formula

C₈H₁₂Si

Mol­e­c­u­lar Weight

136.266

EINECS

214-192-0

Beil­stein Reg­istry Number

1739438

MDL Number

MFCD00008607

Prop­er­ties

Appear­ance

clear liq­uid

Safe­ty Data

Sym­bol

GHS02, GHS07

Sig­nal Word

Warn­ing

Haz­ard statements

Pre­cau­tion­ary Statements

WGK Germany

3

MSDS Download

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our 

Iden­ti­fi­ca­tion Methods

Assay

98% min

B.P(℃)

0.8 g/​mL at 25℃(lit.)

Shelf Life

Stor­age

Known Appli­ca­tion

Tetraethoxysi­lane plays sig­nif­i­cant roles in semi­con­duc­tor, pho­to­volta­ic, sur­face mod­i­fi­ca­tion, and nan­otech­nol­o­gy fields. Tetraethoxysi­lane can be employed in chem­i­cal vapor depo­si­tion (CVD) process­es for the growth of sil­i­con films, which are uti­lized in the semi­con­duc­tor indus­try for inte­grat­ed cir­cuit fabrication.

Gen­er­al View of Documents

Links

This prod­uct is devel­oped by our R&D com­pa­ny Warshel Chem­i­cal Ltd (https://​www​.warshel​.com/).

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