TRI­ETHYL­GAL­LI­UM CAS 1115-99-7

• Iden­ti­fi­ca­tion
• Prop­er­ties
• Safe­ty Data
• Spec­i­fi­ca­tions & Oth­er Information
• Links
• Quick Inquiry

Iden­ti­fi­ca­tion

CAS Number

1115-99-7

Name

TRI­ETHYL­GAL­LI­UM

Syn­onyms

1115-99-7 [RN]
214-232-7 [EINECS]
Gal­li­um, tri­ethyl- [ACD/​Index Name]
Tri­ethyl­gal­li­um [ACD/IUPAC Name]
Tri­ethyl­gal­li­um [Ger­man] [ACD/IUPAC Name]
Triéthyl­gal­li­um [French] [ACD/IUPAC Name]
MFCD00015094
Tri­ethyl gal­li­um
tri­ethyl­gal­lane
Tri­ethyl­gal­li­um, elec. gr.

SMILES

CC[Ga](CC)CC

Std­InChI

InChI=1S/3C2H5.Ga/​c31-2;/h31H2,2H3 ;

Std­InChIKey

RGG­P­NX­QUM­R­M­PRA-UHF­F­­FAOYSA-N

Mol­e­c­u­lar Formula

C₆H₁₅Ga

Mol­e­c­u­lar Weight

156.906

EINECS

214-232-7

Prop­er­ties

Struc­ture

Struc­ture of TRI­ETHYL­GAL­LI­UM CAS 1115-99-7

Safe­ty Data

Sym­bol

GHS02, GHS05

Sig­nal Word

Warn­ing

Haz­ard statements

Pre­cau­tion­ary Statements

WGK Germany

3

MSDS Download

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our 

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Known Appli­ca­tion

Tri­ethyl­gal­li­um is a com­mon­ly used pre­cur­sor for the pro­duc­tion of semi­con­duc­tor mate­ri­als such as gal­li­um nitride (GaN) and gal­li­um arsenide (GaAs). These semi­con­duc­tor mate­ri­als find crit­i­cal appli­ca­tions in elec­tron­ic devices, lasers, and opto­elec­tron­ic devices. Semi­con­duc­tor mate­ri­als derived from tri­ethyl­gal­li­um can be uti­lized in the man­u­fac­tur­ing of opto­elec­tron­ic devices such as light-emit­t­ing diodes (LEDs), laser diodes (LDs), etc. These devices play a cru­cial role in light­ing, com­mu­ni­ca­tion, and dis­play technologies.

Gen­er­al View of Documents

Links

This prod­uct is devel­oped by our R&D com­pa­ny Warshel Chem­i­cal Ltd (https://​www​.warshel​.com/).

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