Structure of Triethylindium CAS 923 34 2 - Triethylindium CAS 923-34-2

Iden­ti­fi­ca­tion

CAS Number

923-34-2

Name

Tri­ethylindi­um

Syn­onyms

213-095-0 [EINECS]
923-34-2 [RN]
Indi­um, tri­ethyl- [ACD/​Index Name]
Tri­ethylindi­um [ACD/IUPAC Name]
Tri­ethylindi­um [Ger­man] [ACD/IUPAC Name]
Triéthylindi­um [French] [ACD/IUPAC Name]
98112-81-3 [RN]
tri­ethylindi­gane

SMILES

CC[In](CC)CC

Std­InChI

InChI=1S/3C2H5.In/​c31-2;/h31H2,2H3 ;

Std­InChIKey

OTR­PZROO­JRIMKW-UHF­F­­FAOYSA-N

Mol­e­c­u­lar Formula

C6H15In

Mol­e­c­u­lar Weight

202.001

EINECS

213-095-0

Prop­er­ties

Structure of Triethylindium CAS 923 34 2 - Triethylindium CAS 923-34-2

Struc­ture of Tri­ethylindi­um CAS 923-34-2

Safe­ty Data

Sym­bol

WGK Germany

3

MSDS Download

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our 

Known Appli­ca­tion

Tri­ethylindi­um is a key pre­cur­sor in thin film depo­si­tion tech­nolo­gies like CVD and ALD. It is used to deposit high-qual­i­­ty indi­um com­pound films in the semi­con­duc­tor indus­try and oth­er fields.

Tri­ethylindi­um can be employed in the prepa­ra­tion of indi­um com­pound films for use in opto­elec­tron­ic devices, includ­ing solar cells and light-emit­t­ing diodes (LEDs). And Tri­ethylindi­um is a cru­cial pre­cur­sor in the semi­con­duc­tor indus­try, used for deposit­ing indi­um com­pound films, such as indi­um gal­li­um alloys (InGaAs). These films have impor­tant appli­ca­tions in elec­tron­ic devices and opto­elec­tron­ics, such as high-elec­tron-mobil­i­­ty tran­sis­tors (HEMTs) and laser devices.
Tri­ethylindi­um is also uti­lized in met­alor­gan­ic chem­istry as an organometal­lic pre­cur­sor, par­tic­i­pat­ing in some organ­ic syn­the­sis reactions.

Gen­er­al View of Documents

This prod­uct is devel­oped by our R&D com­pa­ny Warshel Chem­i­cal Ltd (https://​www​.warshel​.com/).

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