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Identification
CAS Number
3385-78-2
Name
TRIMETHYLINDIUM
Synonyms
222-200-9 [EINECS]
3385-78-2 [RN]
Indium, trimethyl- [ACD/Index Name]
Trimethylindium [ACD/IUPAC Name] [Wiki]
Trimethylindium [German] [ACD/IUPAC Name]
Triméthylindium [French] [ACD/IUPAC Name]
MFCD00014846
trimethylindigane
trimethylindium C3H9In, low temperature, monoclinic, C2/C
Trimethylindium, elec. gr.
SMILES
C[In](C)C
StdInChI
InChI=1S/3CH3.In/h3*1H3 ;
StdInChIKey
IBEFSUTVZWZJEL-UHFFFAOYSA-N
Molecular Formula
C3H9In
Molecular Weight
159.922
MDL Number
MFCD00014846
Propertiest
Structure
Structure of TRIMETHYLINDIUM CAS 3385-78-2
Safety Data
Symbol
WGK Germany
3
MSDS Download
Known Application
Trimethylindium can be utilized in CVD and ALD processes for the preparation of various indium compound films. And Trimethylindium is also employed in metalorganic chemistry as an organometallic precursor, participating in some organic synthesis reactions.
Thin films of indium compounds deposited from trimethylindium are widely used in optoelectronics. This includes photovoltaic devices, laser devices, and other optical components.
Trimethylindium is commonly used as a precursor material in semiconductor manufacturing. It can be employed for depositing indium gallium alloys (InGaAs), among other compound semiconductor materials. These materials find important applications in optoelectronics and high-speed electronic devices, such as high-electron-mobility transistors (HEMTs).
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This product is developed by our R&D company Warshel Chemical Ltd (https://www.warshel.com/).
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