structure of Trimethylaluminium CAS 75-24-1

Iden­ti­fi­ca­tion

CAS Number

75-24-1

Name

Trimethy­la­lu­mini­um

Syn­onyms

AlMe3
Alu­minum trimethanide
Alu­minum, trimethyl- [ACD/​Index Name]
AV210LG46J
BD2204000
MFCD00008252 [MDL num­ber]
TMA
trimethyl alu­minum
Trimethy­la­lu­mini­um [ACD/IUPAC Name] [Wiki]
Trimethy­la­lu­mini­um [Ger­man] [ACD/IUPAC Name]
Triméthy­la­lu­mini­um [French] [ACD/IUPAC Name]
trimethy­la­lu­minum [Wiki]
(CH3)3Al
26628-81-9 [RN]
4-04-00-04397 (Beil­stein Hand­book Ref­er­ence) [Beil­stein]
alu­mini­um, trimethyl-
Alu­minum trimethyl
EINECS 200-853-0
Trimethy­lalane
trimethy­lalumane
trimethyl-alu­minum
Trimethy­la­lu­minum, 2M in toluene
Trimethy­la­lu­minum, elec. gr.
Trimethy­la­lu­minum, elec​.gr.
Trimethylaluminum,2.0M in hexa­ne
Trimethy­la­lu­minum­miss­ing
trimeti­lalumínio [Por­tuguese]
UN 1103
UNII :AV210LG46J
UNII-AV210L­G46J

SMILES

C[Al](C)C

Std­InChI

InChI=1S/3CH3.Al/​h3*1H3 ;

Std­InChIKey

JLTRXTDYQLMH­­GR-UHF­F­­FAOYSA-N

Mol­e­c­u­lar Formula

C3H9Al

Mol­e­c­u­lar Weight

72.085

MDL Number

MFCD00008252

Prop­er­ties

Safe­ty Data

Sym­bol

exclamation-mark-jpgexclamation-mark-jpgexclamation-mark-jpgexclamation-mark-jpgGHS02,GHS05,GHS07,GHS08

Sig­nal Word

Warn­ing

Haz­ard statements

H225 – H250 – H260 – H304 – H314 – H336 – H361d – H373 – H412

Pre­cau­tion­ary Statements

P210 – P231 + P232 – P280 – P301 + P330 + P331 – P303 + P361 + P353 – P304 + P340 + P310 – P305 + P351 + P338

WGK Germany

3

MSDS Download

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our 

Iden­ti­fi­ca­tion Methods

Struc­ture

structure of Trimethylaluminium CAS 75-24-1

Struc­ture of Trimethy­la­lu­mini­um CAS 75-24-1

Known Appli­ca­tion

Trimethy­la­lu­minum serves as a pre­cur­sor mate­r­i­al in the MOCVD method, used for deposit­ing met­al oxide films such as alu­minum oxide. And In some organ­ic syn­the­sis reac­tions, trimethy­la­lu­minum is used as a pre­cur­sor for cat­a­lysts, play­ing a role in cat­alyz­ing cer­tain reactions.

Trimethy­la­lu­minum is a com­mon pre­cur­sor mate­r­i­al used to deposit met­al films, such as alu­minum, alu­minum alloys, or oth­er met­al oxide films, in semi­con­duc­tor devices. These films play a cru­cial role in inte­grat­ed cir­cuits and oth­er micro­elec­tron­ic devices.

Gen­er­al View of Documents

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