Sul­fo­ni­um, triph­enyl-, 1-tricyclo[3.3.1.13,7]dec-1-yl ethane­dioate (1:1) CAS 1638753-76-0

• Iden­ti­fi­ca­tion
• Prop­er­ties
• Safe­ty Data
• Spec­i­fi­ca­tions & Oth­er Information
• Links
• Quick Inquiry

Iden­ti­fi­ca­tion

CAS Number

1638753-76-0

Name

Sul­fo­ni­um, triph­enyl-, 1-tricyclo[3.3.1.13,7]dec-1-yl ethane­dioate (1:1)

Syn­onyms

Triph­enyl­sul­fo­ni­um 2-(1-Adamantyloxy)-2-oxoacetate

SMILES

O=C([O-])C(=O)OC12CC3CC(CC(C3)C1)C2.c1ccc(S+c2ccccc2)cc1

Std­InChI

InChI=1S/C18H15S.C12H16O4/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18;13-10(14)11(15)16-12-4-7-1-8(5-12)3-9(2-7)6-12/h1-15H;7-9H,1-6H2,(H,13,14)/q+1;/p-1

Std­InChIKey

ZZXP­B­BGDNL­N­WFR-UHF­F­­FAOYSA-M

Mol­e­c­u­lar Formula

C30H30O4S

Mol­e­c­u­lar Weight

486.626

Prop­er­ties

Appear­ance

White to off-white powder

Safe­ty Data

RIDADR 

NONH for all modes of transport

WGK Germany

3

Spec­i­fi­ca­tions and Oth­er Infor­ma­tion of Our Sul­fo­ni­um, triph­enyl-, 1-tricyclo[3.3.1.13,7]dec-1-yl ethane­dioate (1:1) CAS 1638753-76-0

Iden­ti­fi­ca­tion Methods

HNMR, HPLC

Puri­ty

99%min, 99.5% min

Total met­al impurities

＜100ppb, ＜50ppb

Shelf Life

2 years

Stor­age

Under room tem­per­a­ture away from light

Known Appli­ca­tion

This prod­uct is pri­mar­i­ly used as a pho­toacid gen­er­a­tor (PAG) in chem­i­cal­ly ampli­fied pho­tore­sist sys­tems for advanced semi­con­duc­tor lith­o­g­ra­phy. Upon expo­sure to UV or deep ultra­vi­o­let (DUV) light, it gen­er­ates strong acids that ini­ti­ate cat­alyt­ic depro­tec­tion reac­tions in pho­tore­sist mate­ri­als, enabling high-res­o­lu­­tion pat­tern formation.

Typ­i­cal appli­ca­tions include :
Semi­con­duc­tor pho­tore­sist for­mu­la­tions
Inte­grat­ed cir­cuit (IC) man­u­fac­tur­ing
Advanced lith­o­g­ra­phy process­es (DUV / ArF)
Micro­elec­tron­ic and nanofab­ri­ca­tion tech­nolo­gies
Chem­i­cal­ly ampli­fied resist (CAR) sys­tems
Advanced pack­ag­ing appli­ca­tions
Elec­tron­ic and opto­elec­tron­ic materials

This type of sul­fo­ni­um salt PAG is wide­ly used due to its high acid gen­er­a­tion effi­cien­cy, good ther­mal sta­bil­i­ty, and suit­abil­i­ty for advanced-node lith­o­g­ra­phy process­es requir­ing high res­o­lu­tion and low line-edge roughness.

Links

This prod­uct is devel­oped by our R&D com­pa­ny Wat­sonChem Advanced Chem­i­cal Mate­ri­als (https://​www​.wat​sonchem​.com/).

Quick Inquiry

Fill out our inquiry form and one of our experts will be in touch with you shortly.